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An article on understanding the model rules and parameter meanings of field-effect transistors
There are currently two naming methods for field-effect transistors. The first naming method is to use the third letter J of the model to represent the junction field-effect transistor and O to represent the insulated gate field-effect transistor. The sec
23
2024-04
The working principle, characteristics, and function of field-effect transistors
Field Effect Transistor (FET) stands for Field Effect Transistor. A typical transistor is called a bipolar transistor due to the participation of two types of polar carriers, namely the majority carrier and the reverse polarity minority carrier, in conduc
22
2024-04
Resistor dimensions and packaging standards
Resistors come in various packaging styles and sizes. Currently, rectangular surface mount (SMD) resistors are commonly used, but old-fashioned axial resistors are still widely used in through hole designs.
18
2024-04
Semiconductor "Black Technology": What is Gallium Nitride (GaN)?
Gallium nitride (GaN) is known as the third generation semiconductor material after the first generation of Ge and Si semiconductor materials, the second generation of GaAs and InP compound semiconductor materials. Today, let's take a brief look at what t
03
2023-11
关于发展集成电路产业,“两会”代表们都说了什么?
李东生表示,中国的工业产出量很大,但在一部分高端制造领域,短板依然比较明显。先进制造领域的集成电路、芯片产业,目前中国和全球领先水平还有不少差距。有些高端装备、工业软件还是要依赖国外。所以,中国制造业高质量发展更多要通过提升技术能力。
09
2023-03
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